| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor laser that can maintain self-excited oscillation with high light output and/or up to a high operation temperature, and can be manufactured with an improved yield. SOLUTION: In a semiconductor layer, the effective for bidden bandwidth of a saturable absorption region 232 is in contact with the saturable absorption region 232 and is selected to be larger than the effective forbidden bandwidth of an outside region 233 where no light permeates. The carriers of the saturable absorption region 232 travels efficiently to an outer region 13, and the carrier life time of the saturable absorption region becomes effectively short, thus maintaining self-excited oscillation wit high light output and up to a high operation temperature.
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