METHOD FOR FILLING CU FILLING OF NON DEFECT IN VIA USING CURRENT DENSITY CONTROL

摘要

PURPOSE: A method for filling a CU filling material having non defect in a via is provided to prevent the electrical short of a semiconductor device. CONSTITUTION: A via(130) is formed in a silicon wafer(110). A CU filling material having no defect is filled in a via. Electric current density is controlled in the filling. The Cu filling material is filled by controlling electric current density. The filling is performed on a lower, a middle portion and an upper portion of the via. [Reference numerals] (AA) Low current authorization; (BB) Middle current authorization; (CC) High current authorization