发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit that can improve its transient response characteristics without an excessive increase of layout area of power voltage generation circuit and a test method for such semiconductor circuits. SOLUTION: The semiconductor circuit is equipped with a functional circuit and power voltage generation circuit. In the power voltage generation circuit, a plurality of reference voltages made by a plurality of serially connected resistors and the output voltage of a plurality of differential amplifiers connected in parallel are compared, and the output stage transistor is driven with the gate voltage being varied.
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申请公布号 |
JP2002163888(A) |
申请公布日期 |
2002.06.07 |
申请号 |
JP20000356090 |
申请日期 |
2000.11.22 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KONDO MASATAKA;OTA KIYOTO;YAMAZAKI HIROYUKI;SUZUKI RIICHI;HIROSE MASANOBU |
分类号 |
G01R31/28;G05F3/24;G11C11/401;G11C11/407;G11C11/413;G11C29/14;G11C29/56;(IPC1-7):G11C11/407;G11C29/00 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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