发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit that can improve its transient response characteristics without an excessive increase of layout area of power voltage generation circuit and a test method for such semiconductor circuits. SOLUTION: The semiconductor circuit is equipped with a functional circuit and power voltage generation circuit. In the power voltage generation circuit, a plurality of reference voltages made by a plurality of serially connected resistors and the output voltage of a plurality of differential amplifiers connected in parallel are compared, and the output stage transistor is driven with the gate voltage being varied.
申请公布号 JP2002163888(A) 申请公布日期 2002.06.07
申请号 JP20000356090 申请日期 2000.11.22
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KONDO MASATAKA;OTA KIYOTO;YAMAZAKI HIROYUKI;SUZUKI RIICHI;HIROSE MASANOBU
分类号 G01R31/28;G05F3/24;G11C11/401;G11C11/407;G11C11/413;G11C29/14;G11C29/56;(IPC1-7):G11C11/407;G11C29/00 主分类号 G01R31/28
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