| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device in which a steep impurity profile can be attained using laser anneal method without causing increase in parasitic resistance and finer patterning and high integration of semiconductor elements can be dealt with sufficiently. SOLUTION: After a gate electrode 3 is patterned on an N type silicon single crystal semiconductor substrate 1 through a gate insulation film 2, atoms having properties sufficient for rendering single crystal Si amorphous, e.g. Ge<+> ions, are implanted obliquely (shown by arrow 4) to the Si surface of the substrate 1 using the gate electrode 3 as a mask. Consequently, the single crystal Si is fused and recrystallized to form an amorphous region 5 extending into the substrate 1 beneath the gate electrode 3. Subsequently, B<+> ions are implanted into the amorphous region 5 and laser irradiation is executed.
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