发明名称 |
Method of patterning a metal gate of semiconductor device |
摘要 |
Provided are methods of patterning metal gate structures including a high-k gate dielectric. In an embodiment, a soluble hard mask layer may be used to provide a masking element to pattern a metal gate. The soluble hard mask layer may be removed from the substrate by water or a photoresist developer. In an embodiment, a hard mask including a high-k dielectric is formed. In a further embodiment, a protection layer is formed underlying a photoresist pattern. The protection layer may protect one or more layers formed on the substrate from a photoresist stripping process.
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申请公布号 |
US8357617(B2) |
申请公布日期 |
2013.01.22 |
申请号 |
US20090371672 |
申请日期 |
2009.02.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;YEH MATT;LIN SHUN WU;CHEN CHI-CHUN;CHEN RYAN CHIA-JEN;CHEN YI-HSING;CHEN CHIEN-HAO;CHAO DONALD Y.;HUANG KUO-BIN |
发明人 |
YEH MATT;LIN SHUN WU;CHEN CHI-CHUN;CHEN RYAN CHIA-JEN;CHEN YI-HSING;CHEN CHIEN-HAO;CHAO DONALD Y.;HUANG KUO-BIN |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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