APPARATUS AND METHOD WHICH REDUCE THE EROSION RATE OF SURFACES EXPOSED TO HALOGEN-CONTAINING PLASMAS

摘要

PURPOSE: A device and a method capable of reducing erosion rate of surfaces exposed to halogen - containing plasma is provided to reduce plasma erosion of a semiconductor processing device. CONSTITUTION: A device capable of reducing erosion rate of surfaces exposed to halogen - containing plasma is sintered solid solution containing ceramic semiconductor processing device. The ceramics has resistance for erosion due to halogen - containing plasma. The ceramic is formed from 96-94 mole% zirconium oxide and 4-6mole% yttrium oxide. The average grain size of the sintered solid solution - containing ceramics is 0.5-8.0 micro meters. A method of reducing the plasma erosion of the semiconductor processing device includes the following step: selecting the semiconductor processing device which will be the sintered solid solution - containing ceramics processing device.