| 摘要 |
PURPOSE: A semiconductor package and a manufacturing method thereof are provided to produce a 3D semiconductor package by laminating a semiconductor package by using a TOV(Through Organic Via) process. CONSTITUTION: A silicon substrate(100) has a plurality of holes. An insulating layer(104) is formed by filling a plurality of holes with an organic material. A passive device is formed on the organic material. The organic material is corresponded to one or more holes of the plurality of holes. A metal layer is formed by filling metal before the organic material is filled in the plurality of holes. |
