发明名称 COMPOSITION FOR COATING PHOTORESIST PATTERN DEVELOPED BY NEGATIVE TONE DEVELOPER AND METHOD OF FORMING FINE PATTERN USING THE SAME
摘要 <p>PURPOSE: A photoresist pattern-coating composition is provided to have a small line width change according to temperature and to prevent defects. CONSTITUTION: A photoresist pattern-coating composition comprises a fat-soluble polymer compound, and a C4-12 organic solvent which comprises 1-4 oxygen atoms. The polarity(log P) of the fat-soluble polymer compound is 1.0-8.0. The fat-soluble polymer compound comprises a repeating unit indicated in chemical formula 1. In chemical formula 1, R1 is a hydrogen atom or methyl group, each of R2 and R3 is independently a C1-7 linear or branched hydrocarbon group which contains 1-4 oxygen atoms or nitrogen atoms or not, R2 and R3 is connected to each other and can form a ring, an X does not exist, or a C1-3 linear or branched hydrocarbon group which contains or not 1-3 oxygen atoms.</p>
申请公布号 KR20130007757(A) 申请公布日期 2013.01.21
申请号 KR20110068276 申请日期 2011.07.11
申请人 DONGJIN SEMICHEM CO., LTD. 发明人 LEE, JUNG YOUL;JANG, EU JEAN;LEE, JAE WOO;KIM, JAE HYUN
分类号 G03F7/32;G03F7/004 主分类号 G03F7/32
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