发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>A highly purified oxide semiconductor layer is formed in such a manner that a substance that firmly bonds during film formation to an impurity containing a hydrogen atom is introduced into a film formation chamber, the substance is reacted with the impurity containing a hydrogen atom remaining in the film formation chamber, and the substance is changed to a stable substance containing the hydrogen atom. The stable substance containing the hydrogen atom is exhausted without providing a metal atom of an oxide semiconductor layer with the hydrogen atom; therefore, a phenomenon in which a hydrogen atom or the like is taken into the oxide semiconductor layer can be prevented. As the substance that firmly bonds to the impurity containing a hydrogen atom, a substance containing a halogen element is preferable, for example.</p> |
申请公布号 |
KR20130008037(A) |
申请公布日期 |
2013.01.21 |
申请号 |
KR20127026043 |
申请日期 |
2011.02.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SUZUKI KUNIHIKO |
分类号 |
H01L29/786;H01L21/203;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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