METHOD OF FORMING CAPACITOR STRUCTURE AND SILICON ETCHING LIQUID USED IN THE SAME

摘要

PURPOSE: A method for forming a capacitor structure and a silicon etching solution used in the same are provided to efficiently and accurately remove amorphous silicon or polycrystal silicon. CONSTITUTION: A method for forming a capacitor structure is as follows. A first coat film(1) and a second coat film(2) are formed on a silicon wafer(3). A photoresist(4) is patterned and opened using anisotropic dry etching technique to form concave portions(Ka). A conductive film is formed along the wall surfaces of the concave portions and the top surface of the second coat film. A laying film for protecting the conductive film is formed on the conductive film. The second coat film and the laying film are removed using wet etching technique. A capacitor structure is formed by successively forming a lower electrode, a capacity insulation layer, and an upper electrode.