| 摘要 |
PURPOSE: A method for manufacturing a mask for forming a contact hole of a semiconductor device is provided to prevent an abnormal hole pattern by suppressing an exposure effect on a first photoresist pattern when a second photoresist pattern is formed. CONSTITUTION: A first photoresist is formed on an etched layer(11). A first photoresist pattern is formed by patterning the first photoresist with a line/space type. A freezing material layer(14) is formed on the etched layer including the first photoresist pattern. A protection layer(13A,13B) is formed on the surface of the first photoresist pattern through a bake. A line type second photoresist pattern is formed on the etched layer including the protection layer. [Reference numerals] (AA) Freezing
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