LAYERED STRUCTURE OF GRAPHENE, PROCESS FOR PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR COMPRISING THE STRUCTURE

摘要

PURPOSE: A graphene layered structure, a manufacturing method thereof and a transparent electrode and transistor comprising the same are provided to not need separate transcription process and to prevent damages of graphene by directly growing the graphene on an insulator. CONSTITUTION: A manufacturing method of a graphene layered structure comprises: a step of injecting at least one kind of gas ions selected from a nitrogen ion(2) and an oxygen ion, into the surface of a silicon carbide thin film(1) to forming an ion injection layer inside the silicon carbide thin film; a step of heat-treating the silicon carbide thin film for graphenization of the carbide thin film surface layer. The ion injection layer is a nitride silicon layer. The thickness of the ion injection layer is 230 nm or less. The heat-treatment is conducted at 1,000-2,000°C for 0.001-10 hours.