LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME
摘要
PURPOSE: A light emitting device and a manufacturing method thereof are provided to increase an area of a light emitting layer by reducing a piezoelectric field. CONSTITUTION: A first conductive semiconductor layer(112) is formed on a substrate. An electron reservoir layer(105) is formed on the first conductive semiconductor layer and includes an incline side of the semiconductor layer. An active layer(114) is formed on the electron reservoir layer. A second conductive semiconductor layer is formed on the active layer.
申请公布号
KR20130006975(A)
申请公布日期
2013.01.18
申请号
KR20110062689
申请日期
2011.06.28
申请人
SEMIMATERIALS. CO., LTD.;PARK, KUN
发明人
PARK, KUN;KIM, SUN MO;OH, CHUNG SEOK;HWANG, SE KWANG;SONG, HO GEUN;WON, JUN HO;PARK, JI SU