| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance a photoelectric conversion efficiency in a photovoltaic device. <P>SOLUTION: A photovoltaic device comprises: a semiconductor substrate 10; an i-type amorphous layer 12i formed on a front surface of the semiconductor substrate 10; a p-type amorphous layer 12p formed on the i-type amorphous layer 12i; an i-type amorphous layer 16i formed on a back surface of the semiconductor substrate 10; and an n-type amorphous layer 16n formed on the i-type amorphous layer 16i. The photovoltaic device has an oxygen concentration profile whose concentration decreases stepwise from a vicinity of a boundary face between the semiconductor substrate 10 and the i-type amorphous layer 12i or the i-type amorphous layer 16i along a film thickness direction, and the oxygen concentration at the stepwise part in the i-type amorphous layer 12i is higher than that at the stepwise part in the i-type amorphous layer 16i. <P>COPYRIGHT: (C)2013,JPO&INPIT |
