发明名称 |
BONDED SEMICONDUCTOR STRUCTURES AND METHOD OF FORMING SAME |
摘要 |
Methods of forming semiconductor structures include transferring a portion (116a) of a donor structure to a processed semiconductor structure (102) that includes at least one non-planar surface. An amorphous film (144) may be formed over at least one non-planar surface of the bonded semiconductor structure, and the amorphous film may be planarized to form one or more planarized surfaces. Semiconductor structures include a bonded semiconductor structure having at least one non-planar surface, and an amorphous film disposed over the at least one non-planar surface. The bonded semiconductor structure may include a processed semiconductor structure and a portion of a single crystal donor structure attached to a non-planar surface of the processed semiconductor structure.
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申请公布号 |
US2013015442(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
US201113637565 |
申请日期 |
2011.02.22 |
申请人 |
SOITEC;MAZURE CARLOS;NGUYEN BICH-YEN;SADAKA MARIAM |
发明人 |
MAZURE CARLOS;NGUYEN BICH-YEN;SADAKA MARIAM |
分类号 |
H01L29/04;H01L21/302;H01L29/06 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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