发明名称 |
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
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申请公布号 |
US2013015427(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
US201213618436 |
申请日期 |
2012.09.14 |
申请人 |
PANASONIC CORPORATION;OYA MITSUAKI;YOKOGAWA TOSHIYA;YAMADA ATSUSHI;ISOZAKI AKIHIRO |
发明人 |
OYA MITSUAKI;YOKOGAWA TOSHIYA;YAMADA ATSUSHI;ISOZAKI AKIHIRO |
分类号 |
H01L33/04 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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