| 发明名称 |
PLASMA TREATMENT METHOD, PLASMA TREATMENT APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| 摘要 |
A plasma treatment method includes: creating a plasma from a mixed gas containing carbon and nitrogen to generate CN active species, and treating a surface of a semiconductor substrate with the CN active species. |
| 申请公布号 |
US2013017672(A1) |
申请公布日期 |
2013.01.17 |
| 申请号 |
US201213543796 |
申请日期 |
2012.07.07 |
| 申请人 |
SONY CORPORATION;KUBOI NOBUYUKI;FUKUSAWA MASANAGA |
发明人 |
KUBOI NOBUYUKI;FUKUSAWA MASANAGA |
| 分类号 |
H01L21/322;H01L21/3065 |
主分类号 |
H01L21/322 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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