发明名称 |
METHODS OF MANUFACTURING THREE-DIMENSIONAL SEMICONDUCTOR DEVICES |
摘要 |
According to example embodiments, a methods includes forming a peripheral structure including peripheral circuits on a peripheral circuits region of a substrate, recessing a cell array region of the substrate to form a concave region having a bottom surface lower than a top surface of the peripheral structure, forming a stacked layer structure conformally covering the concave region, the stacked layer structure including a plurality of layers sequentially stacked and having a lowest top surface in the cell array region and a highest top surface in the peripheral circuits region, forming a planarization stop layer that conformally covers the stacked layer structure, and planarizing the stacked layer structure using the planarization stop layer in the cell array region as a planarization end point to expose top surfaces of the thin layers between the cell array region and the peripheral circuits region simultaneously with a top surface of the peripheral structure.
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申请公布号 |
US2013017629(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
US201213545535 |
申请日期 |
2012.07.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;PYO MYUNGJUNG;KIM HYO-JUNG;LIM JONGHEUN;KIM KYUNGHYUN;YOON BYOUNGMOON;HAN JAHYUNG |
发明人 |
PYO MYUNGJUNG;KIM HYO-JUNG;LIM JONGHEUN;KIM KYUNGHYUN;YOON BYOUNGMOON;HAN JAHYUNG |
分类号 |
H01L21/306;H01L21/20;H01L21/66 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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