| 摘要 |
Provided are an AlN substrate which has excellent heat transfer efficiency between other members such as a semiconductor substrate to be bonded to a bonding surface, and a method for producing the AlN substrate. The AlN substrate is composed of an AlN sintered body containing a 2A group element and a 3A group element, surface roughness Ra of the bonding surface is 3 nm or less, and the mean value of the length of voids with a length of 0.25 µm or more that are exposed on the bonding surface is 1.5 µm or less, the maximum value being 1.8 µm or less. The method for producing the AlN substrate comprises sintering, at a temperature of 1,500-1,900°C, a precursor formed of a sintering material which contains 88.7-98.5 mass% of AlN, 0.01-0.3 mass% of a 2A group element calculated as oxide and 0.05-5 mass% of a 3A group element calculated as oxide to form a sintered body and HIP treating the sintered body at a temperature of 1,450-2,000°C and at a pressure of 9.8 MPa or more. |
