发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a fine processing pattern with high position precision without using a photomask, typically, a method relating to a contact opening in the process for manufacturing a semiconductor device. SOLUTION: A thin film is formed on a substrate, an interlayer insulating film is formed on the thin film, a micro-lens is formed by making a liquid material to become a lens material reach the region overlapping with the location wherein the opening is formed in the interlayer insulating film and the thin film by a liquid drop discharging method, and the micro-lens is irradiated with laser light to converge the light on the thin film so that parts of the thin film and the interlayer insulating film are removed to form the opening. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008047780(A) 申请公布日期 2008.02.28
申请号 JP20060223534 申请日期 2006.08.18
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MORIWAKA TOMOAKI
分类号 H01L21/768;G02F1/13;G02F1/1343;G09F9/30;H01L21/302;H01L21/336;H01L29/786 主分类号 H01L21/768
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