发明名称 CIRCUIT FOR GENERATING DATA STROBE SIGNAL AND SEMICONDUCTOR MEMORY APPARATUS WITH THE SAME
摘要 A circuit for generating a data output strobe signal and a semiconductor memory apparatus with the same are provided to improve the reliability of data output operation by generating the data output strobe signal using a correction clock with more accurate duty ratio. A duty cycle correction unit(100) outputs a correction clock by correcting duty ratio of an input clock according to a control signal. A duty cycle control unit(200) outputs the control signal by receiving a data output strobe signal. A data output strobe signal generation unit(300) generates the data output strobe signal from the correction clock. The duty cycle correction unit corrects the duty ratio of the input clock according to the number of high signals and low signals included in the control signal including a plurality of signals.
申请公布号 KR100813554(B1) 申请公布日期 2008.03.17
申请号 KR20070002747 申请日期 2007.01.10
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YUN, WON JOO;LEE, HYUN WOO
分类号 G11C7/10;G11C8/00 主分类号 G11C7/10
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