发明名称 RAW MATERIAL GAS SUPPLY DEVICE FOR SEMICONDUCTOR MANUFACTURING DEVICE
摘要 The present invention is formed from: a liquid raw material gas supply source; a source tank that stores that liquid raw material gas; a gas flow passage that supplies raw material gas that is vapor of the liquid raw material gas from an upper space inside the source tank to a processing chamber; an automatic pressure regulator interposed on the upstream side of the gas flow passage for maintaining the supply pressure of the raw material gas supplied to the processing chamber at a set value; a supply gas cutoff valve that is interposed on the downstream side of the gas flow passage and opens and closes the passage for the raw material gas supplied to the processing chamber; an orifice provided on either or both of the inlet side and outlet side of the supply gas cutoff valve for adjusting the amount of flow of the raw material gas supplied to the processing chamber; and a constant temperature heating device that heats the source tank, gas flow passage, supply gas cutoff valve, and orifice to a set temperature. While the supply pressure for the raw material gas on the downstream side of the automatic pressure regulator is controlled to a desired pressure, a set flow rate of raw material gas is supplied to the processing chamber.
申请公布号 WO2013008372(A1) 申请公布日期 2013.01.17
申请号 WO2012JP02832 申请日期 2012.04.25
申请人 FUJIKIN INCORPORATED;NAGASE, MASAAKI;HIDAKA, ATSUSHI;HIRATA, KAORU;DOHI, RYOUSUKE;NISHINO, KOUJI;IKEDA, NOBUKAZU 发明人 NAGASE, MASAAKI;HIDAKA, ATSUSHI;HIRATA, KAORU;DOHI, RYOUSUKE;NISHINO, KOUJI;IKEDA, NOBUKAZU
分类号 C23C16/448;H01L21/31 主分类号 C23C16/448
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