| 摘要 |
A nitride light-emitting device includes an N-type nitride semiconductor layer; an active layer disposed on the N-type nitride semiconductor layer; and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor includes a heterojunction structure having a GaN layer and an N-type AlxInyGaN layer that is doped with an N-type dopant, and a two-dimensional electron gas (2DEG) layer formed in an interface between the GaN layer and the N-type AlxInyGaN layer. |
