| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a reverse blocking insulated gate type bipolar transistor in which a separation layer used for curving the terminal end of high breakdown voltage pn junction in the reverse direction and extending the curved terminal end onto the surface, and ensuring of the high breakdown voltage in the reverse direction and reduction in leakage current during reverse bias are possible. <P>SOLUTION: A tapered groove is formed by anisotropic alkaline etching so that the semiconductor substrate thickness between bottoms of the tapered grooves formed of one main surface and the other main surface becomes 60 μm or more. <P>COPYRIGHT: (C)2013,JPO&INPIT |
