| 摘要 |
<p>A light emitting device is provided. The light emitting device comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising a plurality of well layers and a plurality of barrier layers. The plurality of barrier layers comprise a first barrier layer which is the nearest to the second conductive type semiconductor layer, the first barrier layer having a first band gap, a second barrier layer adjacent to the first barrier, and at least one third barrier layer between the second barrier layer and the first conductive type semiconductor layer. The plurality of well layers comprise a first well layer between the first barrier layer and the second barrier layer, the first well layer having a third band gap, and a second well layer between the second barrier layer and the at least one third barrier layer, the second well layer having a second band gap. The first well layer has a thickness thinner than that of the second well layer, and the third band gap is different from the first band gap.</p> |
