Power semiconductor device

摘要

A power semiconductor device and a manufacturing method thereof are provided. The power semiconductor device includes an anode electrode (160) including an anode electrode pad (161), electrode bus lines (162a, 162b) connected to a first side (s1)and a second side (s2) on the anode electrode pad (161), the electrode bus lines (162a, 162b) each having a decreasing width in a direction away from the anode electrode pad (161), and pluralities of first anode electrode fingers (163) and second anode electrode fingers (164) connected with a third side (s3) and a fourth side (s4) on the anode electrode pad (161) and with both sides of the electrode bus line (162a, 162b), a cathode electrode (170) including a first cathode electrode pad (171) and a second cathode electrode pad (172), a plurality of cathode electrode fingers (173) connected with the first cathode electrode pad (171) , and a plurality of second cathode electrode fingers (174) connected with the second cathode electrode pad(172), and an insulation layer (180) disposed at an external portion of the anode.