发明名称 |
Graded Alloy Telluride Layer In Cadmium Telluride Thin Film Photovoltaic Devices And Methods Of Manufacturing The Same |
摘要 |
<p>Cadmium telluride thin film photovoltaic devices 10 are generally disclosed including a graded alloy telluride layer 22. The device can include a cadmium sulfide layer 18, a graded alloy telluride layer 22 on the cadmium sulfide layer 18, and a back contact 24 on the graded alloy telluride layer 22. The graded alloy telluride layer 22 generally has an increasing alloy concentration and decreasing cadmium concentration extending in a direction from the cadmium sulfide layer 18 towards the back contact layer 24. The device 10 may also include a cadmium telluride layer 20 between the cadmium sulfide layer 18 and the graded alloy telluride layer 22. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having a graded cadmium telluride structure.
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申请公布号 |
EP2337084(A3) |
申请公布日期 |
2013.01.16 |
申请号 |
EP20100194274 |
申请日期 |
2010.12.09 |
申请人 |
PRIMESTAR SOLAR, INC |
发明人 |
FELDMANN-PEABODY, SCOTT DANIEL |
分类号 |
H01L31/0296;C23C14/06;C23C14/34;H01L31/073;H01L31/18 |
主分类号 |
H01L31/0296 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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