发明名称 Graded Alloy Telluride Layer In Cadmium Telluride Thin Film Photovoltaic Devices And Methods Of Manufacturing The Same
摘要 <p>Cadmium telluride thin film photovoltaic devices 10 are generally disclosed including a graded alloy telluride layer 22. The device can include a cadmium sulfide layer 18, a graded alloy telluride layer 22 on the cadmium sulfide layer 18, and a back contact 24 on the graded alloy telluride layer 22. The graded alloy telluride layer 22 generally has an increasing alloy concentration and decreasing cadmium concentration extending in a direction from the cadmium sulfide layer 18 towards the back contact layer 24. The device 10 may also include a cadmium telluride layer 20 between the cadmium sulfide layer 18 and the graded alloy telluride layer 22. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having a graded cadmium telluride structure. </p>
申请公布号 EP2337084(A3) 申请公布日期 2013.01.16
申请号 EP20100194274 申请日期 2010.12.09
申请人 PRIMESTAR SOLAR, INC 发明人 FELDMANN-PEABODY, SCOTT DANIEL
分类号 H01L31/0296;C23C14/06;C23C14/34;H01L31/073;H01L31/18 主分类号 H01L31/0296
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