发明名称 PROCESS FOR DETACHMENT OF THIN FILM
摘要 The method involves bombarding a side of a substrate with ions to implant non gaseous heavy ions in sufficient concentration for creating a micro-cavity layer in the substrate, where the layer has a gaseous phase formed by substrate component. The side of the substrate is maintained in intimate contact with a stiffener. The rupture is made in the substrate at the level of micro-cavity by applying thermal treatment and/or detachment constraints.
申请公布号 KR101222498(B1) 申请公布日期 2013.01.16
申请号 KR20060041330 申请日期 2006.05.09
申请人 发明人
分类号 H01L21/20;H01L21/265 主分类号 H01L21/20
代理机构 代理人
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