Gate structure for semiconductor device

摘要

A semiconductor device and method of fabricating thereof is described that includes a substrate having a fin with a top surface and a first and second lateral sidewall. A hard mask layer may be formed on the top surface of the fin (e.g., providing a dual-gate device). A gate dielectric layer and work function metal layer are formed on the first and second lateral sidewalls of the fin. A silicide layer is formed on the work function metal layer on the first and the second lateral sidewalls of the fin. The silicide layer may be a fully-silicided layer and may provide a stress to the channel region of the device disposed in the fin.

主权项

1. A method of semiconductor fabrication, comprising:
providing a semiconductor substrate having a first fin and a second fin; forming a work function metal layer on at least one of the first fin and the second fin; forming a layer including silicon on the work function metal layer and on the first and second fins wherein the forming the layer including silicon includes:
forming a polysilicon layer;etching the polysilicon layer thereby removing it from on the work function metal layer, andforming an amorphous silicon layer on the work function layer after the etching the polysilicon layer; performing a silicide process on the layer including silicon including transforming the amorphous silicon layer to a silicide layer, wherein the silicide layer is disposed on sidewalls of the first and second fins; and forming a fill metal layer on the first and second fins and on the silicide layer.