Composite semiconductor memory device with error correction

摘要

A composite semiconductor memory device, comprising: a plurality of nonvolatile memory devices; and an interface device connected to the plurality of nonvolatile memory devices and for connection to a memory controller, the interface device comprising an error correction coding (ECC) engine. Also, a memory system, comprising: a memory controller; and at least one composite semiconductor memory device configured for being written to and read from by the memory controller and comprising a built-in error correction coding (ECC) engine. Also, a memory system, comprising: a composite semiconductor memory device comprising a plurality of nonvolatile memory devices; and a memory controller connected to the at least one composite semiconductor memory device, for issuing read and write commands to the composite semiconductor memory device to cause data to be written to or read from individual ones of the nonvolatile memory devices; the composite semiconductor memory device providing error-free writing and reading of the data.

主权项

1. A method for writing data in a composite memory device, the composite memory device including an interface device with an external interface for communicating with an external controller, an ECC engine, and a plurality of internal interfaces for communicating with a plurality of non-volatile memory devices, the method comprising:
receiving a write command via the external interface; receiving write input data via the external interface; generating write parity data in the ECC engine using the write input data; transferring the write input data together with the write parity data to any selected one of the plurality of non-volatile memory devices; and programming the write input data together with the write parity data in the selected one of the plurality of non-volatile memory devices.