发明名称 |
FORMING GROUNDED THROUGH-SILICON VIAS IN A SEMICONDUCTOR SUBSTRATE |
摘要 |
A method of forming an interposer includes providing a semiconductor substrate, the semiconductor substrate having a front surface and a back surface opposite the front surface; forming one or more through-silicon vias (TSVs) extending from the front surface into the semiconductor substrate; forming an inter-layer dielectric (ILD) layer overlying the front surface of the semiconductor substrate and the one or more TSVs; and forming an interconnect structure in the ILI) layer, the interconnect structure electrically connecting the one or more TSVs to the semiconductor substrate.
|
申请公布号 |
US2013009317(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
US201113178079 |
申请日期 |
2011.07.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;HSIEH CHI-CHUN;WU WEI-CHENG;YEN HSIAO-TSUNG;HU HSIEN-PIN;HOU SHANG-YUN;JENG SHIN-PUU |
发明人 |
HSIEH CHI-CHUN;WU WEI-CHENG;YEN HSIAO-TSUNG;HU HSIEN-PIN;HOU SHANG-YUN;JENG SHIN-PUU |
分类号 |
H01L23/48;H01L21/283 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|