<p>A high-side transistor (MHU) is provided between an output terminal (OUTU) of the corresponding phase and an upper power line (LP), and includes N (N an integer 2 or greater) electrically parallel high-side transistor units (14U1-N). A low-side transistor (MLU) is provided between the output terminal (OUTU) of the corresponding phase and a lower power line (LN), and includes N electrically parallel low-side transistor units (16U1-N). Snubber circuits (12) are provided for each pair consisting of one high-side transistor unit (14) and the corresponding one low-side transistor unit (16). The high-side transistor (MHU), the low-side transistor (MLU) and the n snubber circuits (12U1-N) are mounted on a metal base substrate.</p>
申请公布号
WO2013005419(A1)
申请公布日期
2013.01.10
申请号
WO2012JP04303
申请日期
2012.07.03
申请人
SUMITOMO HEAVY INDUSTRIES, LTD.;TASAKA, YASUHISA;KIMIJIMA, KENICHI