| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving reliability at a junction part between a wire and a surface electrode of a semiconductor chip by using a proper cooling speed from a thermal aging process temperature. <P>SOLUTION: An aluminum wire 10 which is added with Ni is bonded to an Al-Si electrode film (surface electrode 7) of a semiconductor chip 5. And then, a thermal aging process is applied at a high temperature that is 300°C or below. After that, slow cooling is performed at a cooling speed of 1°C/min or less. Consequently, a process distortion at bonding is removed, and a thermal distortion which is introduced at the time of cooling after thermal aging process is suppressed, providing a semiconductor device 100 having a high reliability. <P>COPYRIGHT: (C)2013,JPO&INPIT |
