SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF

摘要

Provided are a semiconductor device which can exhibit properties thereof steadily and has high quality and a process for producing the semiconductor device. The semiconductor device comprises a substrate (1) which has the main surface and silicon carbide layers (2-5). The silicon carbide layers are formed on the main surface of the substrate (1). Each of the silicon carbide layers has a side surface which is an end surface that is inclined against the main surface. The side surface substantially contains either face [03-3-8] or face [01-1-4] when each of the silicon carbide layers is of a hexagonal crystal type, and substantially contains face [100] when each of the silicon carbide layers is of a cubic crystal type.