| 发明名称 |
METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND METHOD OF MANUFACTURING SAME USING DUMMY GATE PROCES |
| 摘要 |
A method of manufacturing a transistor by which sufficient stress can be applied to a channel region within allowable ranges of concentrations of Ge and C in a mixed crystal layer. A semiconductor device is also provided.
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| 申请公布号 |
US2013009210(A1) |
申请公布日期 |
2013.01.10 |
| 申请号 |
US201213615799 |
申请日期 |
2012.09.14 |
| 申请人 |
SONY CORPORATION;TATESHITA YASUSHI |
发明人 |
TATESHITA YASUSHI |
| 分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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