发明名称 Nonvolatile Memory Devices Including Selective RWW and RMW Decoding
摘要 A nonvolatile memory device is provided, which includes a memory core including a plurality of nonvolatile memory cells, a first read circuit that reads a first codeword from the memory core during a Read While Write (RWW) operation, a second read circuit that reads a second codeword from the memory core during a Read Modification Write (RMW) operation, and a common decoder that is shared by the first read circuit and the second read circuit and selectively decodes the first codeword or the second codeword.
申请公布号 US2013010550(A1) 申请公布日期 2013.01.10
申请号 US201213532911 申请日期 2012.06.26
申请人 SAMSUNG ELECTRONICS CO., LTD.;KIM SEO-HEE;JEON SEONG-HYUN;CHUNG HOI-JU;KIM SUNG-HOON 发明人 KIM SEO-HEE;JEON SEONG-HYUN;CHUNG HOI-JU;KIM SUNG-HOON
分类号 G11C7/00 主分类号 G11C7/00
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