发明名称 |
Nonvolatile Memory Devices Including Selective RWW and RMW Decoding |
摘要 |
A nonvolatile memory device is provided, which includes a memory core including a plurality of nonvolatile memory cells, a first read circuit that reads a first codeword from the memory core during a Read While Write (RWW) operation, a second read circuit that reads a second codeword from the memory core during a Read Modification Write (RMW) operation, and a common decoder that is shared by the first read circuit and the second read circuit and selectively decodes the first codeword or the second codeword.
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申请公布号 |
US2013010550(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
US201213532911 |
申请日期 |
2012.06.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;KIM SEO-HEE;JEON SEONG-HYUN;CHUNG HOI-JU;KIM SUNG-HOON |
发明人 |
KIM SEO-HEE;JEON SEONG-HYUN;CHUNG HOI-JU;KIM SUNG-HOON |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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