发明名称 |
INTERCONNECT STRUCTURE FABRICATED WITHOUT DRY PLASMA ETCH PROCESSING |
摘要 |
An interconnect structure within a microelectronic structure and a method for fabricating the interconnect structure within the microelectronic structure use a developable bottom anti-reflective coating layer and at least one imageable inter-level dielectric layer located thereupon over a substrate that includes a base dielectric layer and a first conductor layer located and formed embedded within the base dielectric layer. Incident to use of the developable bottom anti-reflective coating layer and the at least one imageable inter-level dielectric layer, an aperture, such as but not limited to a dual damascene aperture, may be formed through the at least one imageable inter-level dielectric layer and the developable anti-reflective coating layer to expose a capping layer located and formed upon the first conductor layer, absent use of a dry plasma etch method when forming the interconnect structure within the microelectronic structure.
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申请公布号 |
US2013009312(A1) |
申请公布日期 |
2013.01.10 |
申请号 |
US201213603017 |
申请日期 |
2012.09.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;DARNON MAXIME;GAMBINO JEFFREY P.;HUANG ELBERT E.;LIN QINGHUANG |
发明人 |
DARNON MAXIME;GAMBINO JEFFREY P.;HUANG ELBERT E.;LIN QINGHUANG |
分类号 |
H01L23/485;H05K1/02;H05K1/09 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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