| 摘要 |
The present invention relates to semiconductor memory technical field, specially a containing ruthenium-doped tantalum oxide based resistive type memory. The resistive type memory comprises an upper electrode, a lower electrode, and a containing ruthenium-doped tantalum oxide based storage medium layer located between the upper electrode and the lower electrode. By means of Ru element distributed in the containing Ru-doped tantalum oxide based storage medium layer, it can effectively control formation position and number of the conductive filaments in the tantalum oxide based storage medium layer, and avoid possibility of stochastic formation. Therefore, the performance of the memory is more stable, and the parameter of device performance fluctuates smaller. In the meanwhile, it tends to integrate with 32nm or lower copper interconnection process. |
