| 发明名称 |
METHOD FOR MANUFACTURING HEXAGONAL STRUCTURE CADMIUM SELENIDE SINGLE-CRYSTALLINE FILMS ON SUBSTRATES OF LAYERED CRYSTALS GaSe |
| 摘要 |
A method for manufacturing a single-crystalline film of cadmium selenide of hexagonal structure on substrates of layered crystals GaSe comprises an annealing thereof in cadmium vapor. As a substrate the layered crystals of gallium monoselenide are used. |
| 申请公布号 |
UA76617(U) |
申请公布日期 |
2013.01.10 |
| 申请号 |
UA20120007688U |
申请日期 |
2012.06.22 |
| 申请人 |
CHERNIVTSI DEPARTMENT OF THE INSTITUTE FOR MATERIAL SCIENCE PROBLEMS OF THE NATIONAL ACADEMY OF SCIENCES OF UKRAINE |
发明人 |
KUDRINSKYI ZAKHAR RUSLANOVYCH |
| 分类号 |
H01G4/06 |
主分类号 |
H01G4/06 |
| 代理机构 |
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