| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon etchant which can remove amorphous silicon or polycrystalline silicon exactly and efficiently so as to form an uneven shape on a semiconductor substrate, while keeping active for a long time under the etching conditions, and to provide a formation method of a capacitor structure using the silicon etchant. <P>SOLUTION: A silicon etchant containing ammonia and at least one specific basic organic compound selected from a group consisting of a hydroxylamine compound, a basic organic compound and a metal-containing basic compound, in combination, is applied to a polycrystalline silicon film or an amorphous silicon film 6 so as to remove at least a part of the polycrystalline silicon film or amorphous silicon film thus forming an uneven shape becoming a capacitor in the formation method of a capacitor structure 10. <P>COPYRIGHT: (C)2013,JPO&INPIT |
