发明名称 |
SEMICONDUCTOR DEVICES INCLUDING AN ELECTRICALLY PERCOLATING SOURCE LAYER AND METHODS OF FABRICATING THE SAME |
摘要 |
<p>Various embodiments are provided for semiconductor devices including an electrically percolating source layer and methods of fabricating the same. In one embodiment, a semiconductor device includes a gate layer, a dielectric layer, a memory layer, a source layer, a semiconducting channel layer, and a drain layer. The source layer is electrically percolating and perforated. The semiconducting channel layer is in contact with the source layer and the memory layer. The source layer and the semiconducting channel layer form a gate voltage tunable charge injection barrier.</p> |
申请公布号 |
EP2543086(A2) |
申请公布日期 |
2013.01.09 |
申请号 |
EP20110751409 |
申请日期 |
2011.03.04 |
申请人 |
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. |
发明人 |
RINZLER, ANDREW, GABRIEL;LIU, BO;MCCARTHY, MITCHELL, AUSTIN |
分类号 |
H01L51/00;B82Y10/00;H01L51/05 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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