Laser source for photonic integrated devices

摘要

The present invention relates to a laser source, and more especially a laser source for photonic integrated devices. Its object is a laser source of the III-V type bonded onto a SOI type material (8) that is substantially not sensitive to the bonding quality, that has good thermal behaviour and that does not require deep etching of the III-V waveguide. According to the invention, this laser source comprises one central waveguide (8) formed in an etched III-V die and coupled to two end waveguides formed in a SOI -type die, these dies being bonded together, and is characterized in that it comprises a shallow ridge structure (7) for the III-V straight waveguide region, and a deep ridge structure for the tapered region (20A,20B) for efficient mode coupling from III-V to SOI waveguides.