发明名称 |
INTERNAL REFORMING SUBSTRATE FOR EPITAXIAL GROWTH, INTERNAL REFORMING SUBSTRATE WITH MULTILAYER FILM, SEMICONDUCTOR DEVICE, BULK SEMICONDUCTOR SUBSTRATE, AND PRODUCTION METHODS THEREFOR |
摘要 |
<p>Provided are an internally reformed substrate for epitaxial growth having an arbitrary warpage shape and/or an arbitrary warpage amount, an internally reformed substrate with a multilayer film using the internally reformed substrate for epitaxial growth, a semiconductor device, a bulk semiconductor substrate, and manufacturing methods therefor. The internally reformed substrate for epitaxial growth includes: a single crystal substrate; and a heat-denatured layer formed in an internal portion of the single crystal substrate by laser irradiation to the single crystal substrate.</p> |
申请公布号 |
EP2543752(A1) |
申请公布日期 |
2013.01.09 |
申请号 |
EP20110750807 |
申请日期 |
2011.03.04 |
申请人 |
NAMIKI SEIMITSU HOUSEKI KABUSHIKIKAISHA;DISCO CORPORATION |
发明人 |
AIDA, HIDEO;AOTA, NATSUKO;HOSHINO, HITOSHI;FURUTA, KENJI;HAMAMOTO, TOMOSABURO;HONJO, KEIJI |
分类号 |
C30B29/20;B23K26/00;B23K26/40;C30B33/02;C30B33/04;H01L21/02;H01L21/20;H01L21/268;H01L21/324;H01L31/18;H01L33/00 |
主分类号 |
C30B29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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