| 发明名称 |
Method of forming an MOS transistor and structure therefor |
| 摘要 |
In one embodiment, an MOS transistor is formed with trench gates. The gate structure of the trench gates generally has a first insulator that has a first thickness in one region of the gate and a second thickness in a second region of the gate.
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| 申请公布号 |
US8350318(B2) |
申请公布日期 |
2013.01.08 |
| 申请号 |
US20070840826 |
申请日期 |
2007.08.17 |
| 申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC;GRIVNA GORDON M.;ROBB FRANCINE Y. |
发明人 |
GRIVNA GORDON M.;ROBB FRANCINE Y. |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
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代理人 |
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