| 摘要 |
The thin film transistor manufacturing apparatus comprises a surface modification layer forming means, which forms a surface modification layer on a substrate, an illuminating part, which irradiates light that includes ultraviolet rays, a mask, on which the patterns of the source electrode and the drain electrode are drawn, a projection optical system, which illuminates a mask using light from the illuminating part and projects the pattern of the mask to the substrate as a pattern image, and a coating part, which coats a fluid electrode material to a region in which the surface modification layer has been modified by projection of the pattern image in order to form the source electrode and the drain electrode.
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