| 发明名称 |
Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates |
| 摘要 |
An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.
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| 申请公布号 |
US8351478(B2) |
申请公布日期 |
2013.01.08 |
| 申请号 |
US20100884993 |
申请日期 |
2010.09.17 |
| 申请人 |
SORAA, INC.;RARING JAMES W.;PFISTER NICK;SCHMIDT MATHEW;POBLENZ CHRISTIANE |
发明人 |
RARING JAMES W.;PFISTER NICK;SCHMIDT MATHEW;POBLENZ CHRISTIANE |
| 分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
| 代理机构 |
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代理人 |
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