发明名称 |
Semiconductor memory device and method for fabricating semiconductor memory device |
摘要 |
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory device, comprising a plurality of memory strings, each of the memory strings being constituted with a plurality of electrically erasable memory cells being serially connected each other, the memory strings comprising: a columnar semiconductor layer perpendicularly extending toward a substrate; a plurality of conductive layers being formed in parallel to the substrate and including a first space between a sidewall of the columnar semiconductor layers; and characteristic change layer being formed on the sidewall of the columnar semiconductor layer faced to the first space or a sidewall of the conductive layer faced to the first space and changing characteristics accompanying with applied voltage; wherein the plurality of the conductive layers have a function of a relative movement to a prescribed direction for the columnar semiconductor layer.
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申请公布号 |
US8350314(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US20080325711 |
申请日期 |
2008.12.01 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;FUKUZUMI YOSHIAKI;KATSUMATA RYOTA;KIDOH MASARU;KITO MASARU;TANAKA HIROYASU;AOCHI HIDEAKI;MATSUOKA YASUYUKI |
发明人 |
FUKUZUMI YOSHIAKI;KATSUMATA RYOTA;KIDOH MASARU;KITO MASARU;TANAKA HIROYASU;AOCHI HIDEAKI;MATSUOKA YASUYUKI |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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