发明名称 |
Stress-enhanced performance of a FinFET using surface/channel orientations and strained capping layers |
摘要 |
Different approaches for FinFET performance enhancement based on surface/channel direction and type of strained capping layer are provided. In one relatively simple and inexpensive approach providing a performance boost, a single surface/channel direction orientation and a single strained capping layer can be used for both n-channel FinFETs (nFinFETs) and p-channel FinFETs (pFinFETs). In another approach including more process steps (thereby increasing manufacturing cost) but providing a significantly higher performance boost, different surface/channel direction orientations and different strained capping layers can be used for nFinFETs and pFinFETs.
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申请公布号 |
US8349668(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US201113103677 |
申请日期 |
2011.05.09 |
申请人 |
SYNOPSYS, INC.;MOROZ VICTOR;KING LIU TSU-JAE |
发明人 |
MOROZ VICTOR;KING LIU TSU-JAE |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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