发明名称 |
Forming borderless contact for transistors in a replacement metal gate process |
摘要 |
Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes creating an opening inside a dielectric layer, the dielectric layer being formed on top of a substrate and the opening exposing a channel region of a transistor in the substrate; depositing a work-function layer lining the opening and covering the channel region; forming a gate conductor covering a first portion of the work-function layer, the first portion of the work-function layer being on top of the channel region; and removing a second portion of the work-function layer, the second portion of the work-function layer surrounding the first portion of the work-function layer, wherein the removal of the second portion of the work-function layer insulates the first portion of the work-function layer from rest of the work-function layer.
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申请公布号 |
US8349674(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US201113073151 |
申请日期 |
2011.03.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;PONOTH SHOM;HORAK DAVID V.;KOBURGER, III CHARLES W.;YANG CHIH-CHAO |
发明人 |
PONOTH SHOM;HORAK DAVID V.;KOBURGER, III CHARLES W.;YANG CHIH-CHAO |
分类号 |
H01L21/338 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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