| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method which facilitates manufacture of a semiconductor ultraviolet light-receiving element. <P>SOLUTION: The semiconductor ultraviolet light-receiving element has a single crystal substrate 1, a -c polarity Mg<SB POS="POST">x</SB>Zn<SB POS="POST">1-x</SB>O(0.3≤x≤0.6) layer 14 formed above the single crystal substrate 1, a +c polarity Mg<SB POS="POST">y</SB>Zn<SB POS="POST">1-y</SB>O(0≤y<0.3) layer 4 formed on the same plane as the -c polarity Mg<SB POS="POST">x</SB>Zn<SB POS="POST">1-x</SB>O(0.3≤x≤0.6) layer 14, a Schottky electrode 8 formed on the -c polarity Mg<SB POS="POST">x</SB>Zn<SB POS="POST">1-x</SB>O(0.3≤x≤0.6) layer 14 and the +c polarity Mg<SB POS="POST">y</SB>Zn<SB POS="POST">1-y</SB>O(0≤y<0.3) layer 4, and an ohmic electrode 7 which forms a pair with the Schottky electrode 8. <P>COPYRIGHT: (C)2013,JPO&INPIT |
